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COB(Chip on Board) |
．Substrate: Ceramic, Rigid, Flexible, Glass Board
．Wafer Sawing / Plasma Cleaning / Chip And Wire (Die Bond, Wire Bond)
 Wafer Sawing:
Below 8 inch (Silicon, LiTaO3,LiNaO3,Quartz,Glass)
Die Bonding:
Die thickness: 3 mil to 30 mil.
Die Size: 0.3mm x 0.3mm~12mm x 12mm
Placement accuracy: +/- 25,+/- 50 um
Adhesive: Conductive (electric/ thermal) , Nonconductive epoxy
Plasma Cleaning:
Gas for electric discharge: Argon
Argon plasma treatment eliminates the organic and in-organic
contamination on bond pad of the substrate surface.
Wire Bonding:
Wire diameter: 0.7 mil to 1.3 mil
Bonding accuracy: +/- 6.5 um
Flip Chip Bumping:
Type of bump: Gold stud (use 1 mil Au wire)
Bump diameter: 75 to 110 um
Bump height: 30 to 50 um.
Bump pitch: 175 um minimum.
Bump is applicable be bonded on wafer and the ceramic substrate.
Flip Chip Bonding:
Bonding accuracy: +/-15 um.
Bonding method:
Solder Bump--Pre-Flux , Pre-Solder Connection
Gold Stud---—Au to Au Connection
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